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Transition metal spinel oxides comprised of earth-abundant Mn and Co have long been explored for their use in catalytic reactions and energy storage. However, understanding functional properties can be challenging due to differences in sample preparation and the ultimate structural properties of the materials. Epitaxial thin film synthesis provides a novel means of producing precisely controlled materials to explore the variations reported in the literature. In this work, MnxCo3−xO4 samples from x = 0 to x = 1.28 were synthesized through molecular beam epitaxy and characterized to develop a material properties map as a function of stoichiometry. Films were characterized via in situ x-ray photoelectron spectroscopy, x-ray diffraction, scanning transmission electron microscopy, and polarized K-edge x-ray absorption spectroscopy. Mn cations within this range were found to be octahedrally coordinated, in line with an inverse spinel structure. Samples largely show mixed Mn3+ and Mn4+ character with evidence of phase segregation tendencies with the increasing Mn content and increasing Mn3+ formal charge. Phase segregation may occur due to structural incompatibility between cubic and tetragonal crystal structures associated with Mn4+ and Jahn–Teller active Mn3+ octahedra, respectively. Our results help in explaining the reported differences across samples in these promising materials for renewable energy technologies. 

The SUCCESS project’s main goal is to recruit, retain, and graduate low-income STEM students at WVU Tech and this abstract contains updates for Year 2. The recruitment activities started in early 2021 and continued during the summer of 2021 to form Cohort 1 and during the summer of 2022 to form Cohort 2. Currently, there are 19 scholars/students in the program. 12 new students (10 Computer Science (CS) and 2 Information Systems (IS) majors) were accepted in Fall 2022 and these 12 students are forming Cohort 2. 6 students were accepted into Electrical Engineering (EE) (4), Computer Engineering (CpE) (1), and CS (1) programs in Fall 2021. 2 EE and 1 CS students entered the program in Spring 2022. Two students (both EEs) stopped out of school for mainly their personal issues. These 7 students are forming Cohort 1. So far, scholars have completed at least one entrepreneurship course, attended career fairs, met with industry mentors, and attended senior design presentation events. Some of the scholars work with faculty on research projects. Students are actively engaging with the IEEE/ACM student branches and some of the scholars took leadership positions in these organizations. The SUCCESS team is regularly collecting and analyzing feedback from scholars to ensure that the necessary improvements are implemented. Every semester, scholars’ feedback is collected through pre-, mid-, and post-surveys. These surveys provide insights into scholars’ course/program performance, career updates, and also the level of persistence toward their program of study and entrepreneurship minor. This project is funded by NSF DUE S-STEM Program from 2021-2026. 

The commercial production and subsequent movement of bumble bees for pollination of agricultural field and greenhouse crops is a growing industry in North America and globally. Concerns have been raised about the impacts of pathogen spillover from managed bees to wild pollinators, including from commercial bumble bees. We recommend development of a program to mitigate disease risk in commercial bumble bee production, which will in turn reduce disease stressors on wild pollinators and other insects. We provide recommendations for the components of a clean stock program with specific best management practices for rearing commercial bumble bees including related products such as wax, pollen, and nesting material. 

Bumble bees (Bombus spp.) are important pollinators for both wild and agriculturally managed plants. We give an overview of what is known about the diverse community of internal potentially deleterious bumble bee symbionts, including viruses, bacteria, protozoans, fungi, and nematodes, as well as methods for their detection, quantification, and control. We also provide information on assessment of risk for select bumble bee symbionts and highlight key knowledge gaps. This information is crucial for ongoing efforts to establish parasite-free programs for future commerce in bumble bees for crop pollination, and to mitigate the problems with pathogen spillover to wild populations. 

Bumble bees are important pollinators for a great diversity of wild and cultivated plants, and in many parts of the world certain species have been found to be in decline, gone locally extinct, or even globally extinct. A large number of symbionts live on, in, or with these social bees. We give an overview of what is known about bumble bee ecto-symbionts and parasitoids. We provide information on assessment of risks posed by select bumble bee symbionts and methods for their detection, quantification, and control. In addition, we assess honey bee hive products such as pollen and wax that are used in commercial bumble bee production, and highlight key risks and knowledge gaps. Knowledge of these potential threats to native pollinators is important and they need to be managed in the context of national and international commercial trade in bumble bees to prevent pest introduction and pathogen spillover that can threaten native bees. 

This work demonstrates the advantage of carrying out silicon ion (Si+) implantation at high temperatures for forming controlled heavily doped regions in gallium oxide. Room temperature (RT, 25 °C) and high temperature (HT, 600 °C) Si implants were carried out into MBE grown (010) β-Ga2O3 films to form ∼350 nm deep Si-doped layers with average concentrations up to ∼1.2 × 1020 cm−3. For such high concentrations, the RT sample was too resistive for measurement, but the HT samples had 82.1% Si dopant activation efficiency with a high sheet electron concentration of 3.3 × 1015 cm−2 and an excellent mobility of 92.8 cm2/V·s at room temperature. X-ray diffraction measurements indicate that HT implantation prevents the formation of other Ga2O3 phases and results in reduced structural defects and lattice damage. These results are highly encouraging for achieving ultra-low resistance heavily doped Ga2O3 layers using ion implantation.